TekBox TBMDA-BCI25 Modulated Wideband Power Amplifier

3.391,50
including VAT free shipping (Germany)
min Quantity
1 piece
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base price
Item available at short notice. Delivery Time ~7-14 workdays
Item available at short notice. Delivery Time ~7-14 workdays
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Benefits of the TBMDA-BCI25 Amplifier for Conducted Immunity Testing

  • Frequency range 1 to 400 MHz.
  • 1 dB compression point of up to 30 W.
  • Built in AM/PM modulator enables use of tracking generators as signal source.

TekBox TBMDA-BCI25 Modulated Wideband Power Amplifier

The TekBox TBMDA-BCI25 is a modulated amplifier that offers the necessary bandwidth and modulation for conducted immunity testing with BCI probes per ISO 11452-4 in a frequency range 1 to 400 MHz. The amplifier is designed to be driven by signal generators or by tracking generators of spectrum analyzers. With a 1 dB compression point of up to 30 W in the range 1...400 MHz it can generate test levels up to 400 mA. A built in AM/PM modulator enables use of tracking generators as signal source. The TBMDA-BCI25 has sufficient gain to achieve maximum output power with 0 dBm provided by a spectrum analyzer tracking generator.

Besides 1 kHz, 80% AM, the TekBox TBMDA-BCI25 also provides built in modulation capability to generate PM signals with 1 kHz and 50% duty cycle. In PM mode, the TBMDA-BCI25 can also generate a 217 Hz signal with 12.5% duty cycle in order to simulate mobile phone TDMA noise.

  • CW amplifier (modulation off).
  • 1 kHz, 80% AM modulation.
  • 1 kHz, 50% duty cycle pulse modulation.
  • 217 Hz, 12.5% duty cycle pulse modulation.
  • Frequency range 1...400 MHz.
  • Application
    • General-purpose wideband RF power amplifier.
    • Wideband RF power amplifier for conducted immunity testing driving BCI-probes.
    • Wideband RF power amplifier for radiated immunity testing, driving near field probes.
    • Wideband RF power amplifier for radiated immunity testing, driving TEM cells.

Model Overview

ModelTBMDA-BCI25
Frequency range1...400 MHz
Small signal gain47 dB typ.
Gain flatness1...400 MHz/pin = -3 dBm1.5 dB typ.
Saturated output power1 MHz/pin = 0 dBm45.1 dBm (32.2 W) typ.
10 MHz/pin = 0 dBm45.2 dBm (33 W) typ.
50 MHz/pin = 0 dBm45.9 dBm (38.6 W) typ.
100 MHz/pin = 0 dBm45.7 dBm (37.5 W) typ.
150 MHz/pin = 0 dBm46.2 dBm (41.2 W) typ.
200 MHz/pin = 0 dBm45.6 dBm (36.1 W) typ.
250 MHz/pin = 0 dBm46.3 dBm (42.5 W) typ.
300 MHz/pin = 0 dBm46 dBm (39.7 W) typ.
350 MHz/pin = 0 dBm45.8 dBm (37.8 W) typ.
400 MHz/pin = 0 dBm45 dBm (31.6 W) typ.
1 dB output compression point1 MHz44.1 dBm typ. (pin: -4 dBm)
10 MHz44.6 dBm typ. (pin: -3 dBm)
50 MHz45.3 dBm typ. (pin: -2 dBm)
100 MHz45.2 dBm typ. (pin: -1 dBm)
150 MHz45.2 dBm typ. (pin: -2 dBm)
200 MHz45.2 dBm typ. (pin: -1 dBm)
250 MHz45.6 dBm typ. (pin: -2 dBm)
300 MHz45.1 dBm typ. (pin: -2 dBm)
350 MHz44.8 dBm typ. (pin: -2 dBm)
400 MHz43.6 dBm typ. (pin: -4 dBm)
Harmonics2nd harmonic, 100 MHz, Pout = 45.7 dBm:<–23 dBc typ.
2nd harmonic, 100 MHz, Pout = 40 dBm:<–29 dBc typ.
3rd harmonic, 100 MHz, Pout = 45.7 dBm:<–12 dBc typ.
3rd harmonic, 100 MHz, Pout = 40 dBm:<–19 dBc typ.
Total harmonic distortion8.6% at 100 MHz, Pout = 37 dBm typ.
12.1% at 100 MHz, Pout = 40 dBm typ.
17.6% at 100 MHz, Pout = 43 dBm typ.
25% at 100 MHz, Pout = 45.7 dBm typ.
Third order output intercept point49 dBm, at 100 MHz, Δf = 2 MHz, typ.
Internal modulation frequencyAM1 kHz ±20%
PM1 kHz ±20%, 217 Hz ±20%
duty cycle 50% ±10% at 1 kHz; 12.5% ±20% at 217 Hz
Maximum input power+0 dBm
Input/output50 Ω, N female
SupplySupply voltage range 110...240 V; power consumption 108 W at 220 V
Operating temperature range-20...50°C